SCIA Metrology
Developing the Next Generation Silicon Carbide Crystal Science for a Clean Energy Future


The nation’s leading resource for SiC crystal science, technology, and workforce development. 


To establish a deep understanding of SiC crystal growth, processing, and metrology that guides breakthroughs in SiC science and technology, while educating the next generation of semiconductor researchers.


  • Establish a growth, processing and metrology research center that serves as a national resource for advancing SiC crystal science. 
  • Establish an academic/industry ecosystem that accelerates SiC R&D in a synergistic manner to all participants. 
  • Establish training protocols for SiC crystal growth, processing, and metrology for all academic levels (AA to PhD) and develop a WFD pipeline for SiC growth, processing, and metrology. 
  • Develop a curriculum ensemble for undergrad and grad students to acquire certificates or academic minors focused on SiC and wide bandgap semiconductor theory and experiment.