SCIA Metrology
Developing the Next Generation Silicon Carbide Crystal Science for Power Electronics and Extreme Environments

Vision

The nation’s leading resource for SiC crystal science, technology, and workforce development. 

Mission 

To establish a deep understanding of SiC crystal growth, processing, and metrology that guides breakthroughs in SiC science and technology, while educating the next generation of semiconductor researchers.

Objectives

  • Establish a growth, processing and metrology research center that serves as a national resource for advancing SiC crystal science.
  • Establish an academic/industry ecosystem that accelerates SiC R&D in a synergistic manner to all participants.
  • Establish training protocols for SiC crystal growth, processing, and metrology for all academic levels (AA to PhD) and develop a WFD pipeline for SiC growth, processing, and metrology.
  • Develop a curriculum ensemble for undergrad and grad students to acquire certificates or academic minors focused on SiC and wide bandgap semiconductor theory and experiment.