Spring 2025 Projects
Low Temperature Development of a Porous Carbon Insert for SiC Growth
Objective: The overall project goal is to experimentally connect insert microstructure with reactivity and porosity using O2 oxidation as foundation towards SiC model development and targeted testing.
Principal Investigators: Profs. Randy Vander Wal, Adri van Duin, Yun Kyung Shin and Margaret Kowalik
Role of Diamond Slurry Properties on SiC Removal Rates and Sub-surface Damage
Objective: The goal of this project is to characterize the impact of the diamond synthesis process on particle characteristics and the impact they have on the removal rate and sub-surface damage in single crystal SiC wafers.
Principal Investigators: Matthew Krohn and Joshua Robinson
Impact of SiC source form-factor and packing on boule growth rate and properties
Objective: The proposed research project aims to systematically investigate the impact of SiC source material size and type—from conventional fine powders to large chunk-like sources—on the growth rate and crystalline quality of SiC single crystals using physical vapor transport (PVT).
Principal Investigator(s): Joshua Robinson, Darren Pagan, Yuan Xuan
Deployment of an In Situ X-ray Imaging System for Boule Growth
Objective: Deploy an in situ absorption-contrast X-ray imaging system for monitoring the SiC boule growth process during physical vapor transport (PVT). The system will be used to perform a series of measurements to understand how source powder packing and densification evolve during boule growth.
Principal Investigator(s): Darren Pagan, Joshua Robinson