Mesta Electronics Partners to Power Penn State Semiconductor Research

MESTA

University Park, PA – Mesta Electronics has become one of Penn State’s Silicon Carbide Innovation Alliance (SCIA) founding members. Mesta knows that in order to grow silicon carbide crystals for semiconductors, a stable, precise power source is needed to heat a specialized furnace to extreme temperatures.

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First Tools Installed in the new onsemi Silicon Carbide Crystal Center (SiC3)

The tool is a BoulePro 200, manufactured by Hardinge Kellenberger.

On Wednesday, January 29th, 2025, the first major tool was delivered to the SiC3 facility in the Academic Activities Building on University Park Campus.  The tool is a BoulePro 200, manufactured by Hardinge Kellenberger.  It is the largest of the tools expected in the Center.  It will soon be followed by the PVT furnaces and other tools for processing the boules.

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A Growing Partnership

Joshua Robinson, left, shows off a completed silicon carbide (SiC) boule while Andrew Bowen (right) displays chips frequently used to begin growing the boule.

Penn State to drive industry, job gains while advancing manufacturing of critical material, silicon carbide.

Read more in Impact, the magazine of the College of Earth and Mineral Sciences

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Pureon Joins the Silicon Carbide Innovation Alliance (SCIA)

Pureon-Penn State Representatives

Exciting News! We are honored to share that Pureon has joined the Silicon Carbide Innovation Alliance (SCIA) as a founding member! This marks a significant milestone as we unite with leading innovators to drive the future of Silicon Carbide (SiC) technology. Thanks for meeting us at ICSCRM T.

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Penn State, Morgan Advanced Materials partner to improve semiconductor materials

Morgan Advanced Materials visited Penn State recently to sign a memorandum of understanding.

Penn State and Morgan Advanced Materials have signed a memorandum of understanding (MOU) to catalyze research and development of silicon carbide, known as SiC, a semiconductor material that operates more efficiently at high voltages than competing technologies.

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Silicon Carbide Innovation Alliance to drive industrial-scale semiconductor work

Silicon carbide, a crystal semiconductor material crucial for advanced electronics and clean energy and grown in high-temperature furnaces like the one on the left, is the focus of the Silicon Carbide Innovation Alliance. The alliance will work to advance U.S. silicon carbide technology and workforce development.  Credit: Penn State Materials Research Institute. All Rights Reserved.

By Jamie Oberdick

Known for its ability to withstand extreme environments and high voltages, silicon carbide (SiC) is a semiconducting material made up of silicon and carbon atoms arranged into crystals that is increasingly becoming essential to modern technologies like electric vehicles, renewable energy systems, telecommunications infrastructure and microelectronics.  

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How SCIA Got Its Start

Watch the video - a thumbnail

A partnership that will put silicon carbide crystal research in America back on the map.

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Penn State and onsemi partner to boost silicon carbide research in the U.S.

onsemi penn state visit group photo

Penn State and onsemi, a leader in intelligent power and sensing technologies, have announced the signing of a memorandum of understanding toward an $8 million strategic collaboration that includes the establishment of the onsemi Silicon Carbide Crystal Center (SiC3) at Penn State’s Materials Research Institute. Over the next 10 years, onsemi will fund SiC3 with $800,000 per year.

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